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MX29F8100 - 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

General Description

The MX29F8100 is a 8-mega bit Flash memory organized as either 512K wordx16 or 1M bytex8.

The MX29F8100 includes 8-128KB(131,072) blocks or 8-64KW(65,536) blocks.

MXIC's Flash memories offer the most costeffective and reliable read/write non-volatile random access memory.

Key Features

  • 8M-BIT [1M x 8/512K x 16] CMOS SINGLE.

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Datasheet Details

Part number MX29F8100
Manufacturer Macronix
File Size 225.22 KB
Description 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
Datasheet download datasheet MX29F8100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INDEX PRELIMINARY MX29F8100 FEATURES 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical - Byte programming time: 24us in average Low power dissipation - 50mA active current - 100uA standby current CMOS and TTL compatible inputs and outputs Two independently Protected sectors Deep Power-Down Current - 1uA ICC typical Industry standard surface mount packaging - 48 lead TSOP, TYPE I - 44 lead SOP • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each - Sector erase time: 50ms typical • Auto Erase and Auto Program Algorithms - A