BUZ903DP
BUZ903DP is N-Channel MOSFET manufactured by Magna Tec.
- Part of the BUZ902DP comparator family.
- Part of the BUZ902DP comparator family.
FEATURES
- HIGH SPEED SWITCHING
- SEMEFAB DESIGNED AND DIFFUSED
- HIGH VOLTAGE (220V & 250V)
- HIGH ENERGY RATING
1.2 0.6 2.8
- ENHANCEMENT MODE
- INTEGRAL PROTECTION DIODES
- PLIMENTARY P- CHANNEL BUZ907DP & BUZ908DP
5.45 5.45
TO-3PBL
Pin 1
- Gate
..
Pin 2
- Source Case
- Source
Pin 3
- Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
- Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
- Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction
- Case @ Tcase = 25°C BUZ902DP 220V 16A 16A 250W
- 55 to 150°C 150°C 0.5°C/W BUZ903DP 250V
±14V
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
MAGNA
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)-
BUZ902DP BUZ903DP
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ902DP BUZ903DP IG = ±100µA ID = 100m A ID = 16A ID = 16A VDS = 220V IDSX Drain
- Source Cut- Off Current VGS = -10V BUZ902DP VDS = 250V BUZ903DP yfs- Forward Transfer Admittance VDS = 10V ID = 3A 1.4 4 S 10 m A ID = 10m A Gate
- Source Breakdown Voltage VDS = 0...
