MDF6N60
Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 6.0A RDS(ON) ≤ 1.4Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25o C)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Mounting Torque
- Id limited by maximum junction temperature
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Thermal Characteristics
`
Symbol VDSS VGSS
EAR dv/dt EAS TJ, Tstg
MDP6N60 MDF6N60
±30
6.0-...
