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MDF6N65B - N-Channel Trench MOSFET

General Description

The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDF6N65B is suitable device for SMPS, HID and general purpose applications.

Key Features

  • VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω.

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Datasheet Details

Part number MDF6N65B
Manufacturer MagnaChip
File Size 783.08 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDF6N65B Datasheet

Full PDF Text Transcription for MDF6N65B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDF6N65B. For precise diagrams, and layout, please refer to the original PDF.

MDF6N65B N-channel MOSFET 650V MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45Ω General Description The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low...

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DF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Features VDS = 650V ID = 6.0A RDS(ON) ≤ 1.

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