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MDF6N60B - N-Channel Trench MOSFET

General Description

The MDF6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDF6N60B is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 600V ID = 6.0A RDS(ON) ≤ 1.4Ω.

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Datasheet Details

Part number MDF6N60B
Manufacturer MagnaChip
File Size 807.33 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDF6N60B Datasheet

Full PDF Text Transcription for MDF6N60B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDF6N60B. For precise diagrams, and layout, please refer to the original PDF.

MDF6N60B N-channel MOSFET 600V MDF6N60B N-Channel MOSFET 600V, 6A, 1.45Ω General Description The MDF6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low ...

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6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF6N60B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 6.0A RDS(ON) ≤ 1.

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