MDF6N60B
Description
The MDF6N60B uses advanced Magna Chip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF6N60B is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 6.0A RDS(ON) ≤ 1.4Ω
Applications
Power Supply PFC Ballast
@ VGS = 10V @ VGS = 10V
G DS
Absolute Maximum Ratings (Ta = 25o C)
Characteristics
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Symbol
VDSS VGSS
EAR dv/dt EAS TJ, Tstg
Rating
600 ±30 6.0- 3.8- 24- 37.9 0.3 3.79 4.5 220 -55~150
Unit
V V A A A
W W/ o C m J V/ns m J o...
