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MDF8N60B - N-Channel Trench MOSFET

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

  • VDS = 600V ID = 8.0A RDS(ON) ≤ 1.05Ω @ VGS = 10V @ VGS = 10V.

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Datasheet Details

Part number MDF8N60B
Manufacturer MagnaChip
File Size 834.09 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDF8N60B Datasheet

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Full PDF Text Transcription

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MDF8N60B N-channel MOSFET 600V MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 8.0A RDS(ON) ≤ 1.
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