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MDI6N60B - N-Channel Trench MOSFET

General Description

The MDI6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDI6N60B is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω @ VGS = 10V @ VGS = 10V.

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Datasheet Details

Part number MDI6N60B
Manufacturer MagnaChip
File Size 788.32 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDI6N60B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDI6N60B N-channel MOSFET 600V MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω General Description The MDI6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI6N60B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 4.5A RDS(ON) ≤ 1.