MDP10N027 Overview
Key Features
- VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON) < 2.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G D S TO-220
| Part | MDP10N027 |
|---|---|
| Description | Single N-channel Trench MOSFET |
| Category | MOSFET |
| Manufacturer | MagnaChip |
| Size | 880.15 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |