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MDP10N027TH – Single N-Channel Trench MOSFET 100V
MDP10N027TH
Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ
General Description
Features
The MDP10N027TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 2.
MDP10N027TH Datasheet
