Datasheet4U Logo Datasheet4U.com

MDS1656 - N-Channel Trench MOSFET

General Description

Low RDS(ON), low gate charge can be offering superior benefit in the application.

Key Features

  •  VDS = 30V  ID = 7.2A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V.

📥 Download Datasheet

Datasheet Details

Part number MDS1656
Manufacturer MagnaChip
File Size 1.01 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDS1656 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDS1656– N-Channel Trench MOSFET 30V, 7.2A,28mΩ MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description The MDS1656 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 30V  ID = 7.2A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.