MDS1656 Datasheet | MagnaChip

Description The MDS1656 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 30V  ID = 7.2A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Applications  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current(1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TC=25o C TC=70o C TC=25o C TC=70o C Symbol VDSS VGSS EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Rating 30 ±20 7.2 6.2 30 2 1.44 20 -55~150 Rating 100 60 Unit V V A A A W m J o C Unit o C/W Jan. 2021. Version...