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MDV1527 - N-Channel Trench MOSFET

Description

The MDV1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1527 is suitable for DC/DC converter and general purpose applications.

Features

  •  VDS = 30V  ID = 20A @VGS = 10V  RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D DDD D D DDD S S SG GS S S PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC.

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Datasheet preview – MDV1527

Datasheet Details

Part number MDV1527
Manufacturer MagnaChip
File Size 1.13 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1527 Datasheet
Additional preview pages of the MDV1527 datasheet.

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Full PDF Text Transcription

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MDV1527 – Single N-Channel Trench MOSFET 30V MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mΩ General Description The MDV1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1527 is suitable for DC/DC converter and general purpose applications. Features  VDS = 30V  ID = 20A @VGS = 10V  RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.
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