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MDV1529E - N-Channel Trench MOSFET

Description

The MDV1529E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1529E is suitable for DC/DC converter and general purpose applications.

Features

  •  VDS = 32V  ID = 28A @VGS = 10V  RDS(ON) < 4.5mΩ @VGS = 10V < 6.5mΩ @VGS = 4.5V DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Ta = 25oC unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TC=25oC TC=70oC Symbol VDSS VGSS ID IDM PD EA.

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Datasheet preview – MDV1529E

Datasheet Details

Part number MDV1529E
Manufacturer MagnaChip
File Size 1.03 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1529E Datasheet
Additional preview pages of the MDV1529E datasheet.

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Full PDF Text Transcription

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MDV1529E – Single N-Channel Trench MOSFET 30V MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ General Description The MDV1529E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1529E is suitable for DC/DC converter and general purpose applications. Features  VDS = 32V  ID = 28A @VGS = 10V  RDS(ON) < 4.5mΩ @VGS = 10V < 6.5mΩ @VGS = 4.
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