MDV1529E
MDV1529E is N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDV1529E uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1529E is suitable for DC/DC converter and general purpose applications.
Features
VDS = 32V ID = 28A @VGS = 10V RDS(ON)
< 4.5mΩ @VGS = 10V < 6.5mΩ @VGS = 4.5V
DD DD
DD DD
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25o C unless otherwise specified)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25o C (Silicon limited) TC=25o C (Package limited) TC=70o C
TC=25o C TC=70o C
Symbol VDSS VGSS
IDM PD EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal...
