Datasheet Details
| Part number | MDV1529E |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.03 MB |
| Description | N-Channel Trench MOSFET |
| Datasheet |
 MDV1529E Datasheet
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General Description
The MDV1529E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV1529E is suitable for DC/DC converter and general purpose applications.
Key Features
- VDS = 32V ID = 28A @VGS = 10V RDS(ON) < 4.5mΩ @VGS = 10V < 6.5mΩ @VGS = 4.5V DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Ta = 25oC unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TC=25oC TC=70oC Symbol VDSS VGSS ID IDM PD EA.