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MDV1595S - N-Channel Trench MOSFET

Description

The MDV1595S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1595S is suitable for DC/DC converter and general purpose applications.

Features

  •  VDS = 30V  ID = 36.1A @VGS = 10V  RDS(ON) < 10.7mΩ @VGS = 10V < 13.0mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested  SBD Built In DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70oC TC=25oC TC=100oC TA=25oC TA=70oC Thermal Charact.

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Datasheet Details

Part number MDV1595S
Manufacturer MagnaChip
File Size 1.60 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1595S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDV1595S – Single N-Channel Trench MOSFET 30V MDV1595S Single N-channel Trench MOSFET 30V, 36.1A, 10.7mΩ General Description The MDV1595S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1595S is suitable for DC/DC converter and general purpose applications. Features  VDS = 30V  ID = 36.1A @VGS = 10V  RDS(ON) < 10.7mΩ @VGS = 10V < 13.0mΩ @VGS = 4.
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