MDV5524
MDV5524 is Dual N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDV5524 uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV5524 is suitable for DC/DC converter and general purpose applications.
Features
FET1
FET2
VDS = 30V ID = 24.5A
VDS = 30V ID = 31.2A @VGS = 10V
RDS(ON) < 14.4mΩ < 21.3mΩ
< 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
S2 5
S2 6
S2 7
G2 8
S1/D2 D1
D14D13D12G11
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25o C TC=100o C TA=25o C TA=70o C
TC=25o C TC=100o C TA=25o C TA=70o C
Thermal Characteristics
Characteristics Thermal Resistance,...