Datasheet Details
| Part number | MDV5524 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.51 MB |
| Description | Dual N-Channel Trench MOSFET |
| Datasheet |
 MDV5524 Datasheet
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Description
The MDV5524 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV5524 is suitable for DC/DC converter and general purpose applications.
Features
- FET1 FET2 VDS = 30V ID = 24.5A VDS = 30V ID = 31.2A @VGS = 10V RDS(ON) < 14.4mΩ < 21.3mΩ < 12.6mΩ @VGS = 10V < 15.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 D1 D14D13D12G11 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70o.