MMD65R600Q Datasheet | MagnaChip

Description MMD65R600Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss. - Key Parameters Parameter VDS @ Tj, max RDS(on), max VGS(th), typ ID Qg, typ Value 700 0.60 3 7.3 13.8 Unit V Ω V A n C - Package & Internal Circuit - Features - Low power loss by high speed switching and low on-resistance - 100% avalanche tested - Green Package - Pb-free plating, Halogen-free - Applications - PFC power supply stages - Switching applications - Adapter - Ordering Information Order Code MMD65R600QRH Marking 65R600Q Temp. Range -55 ~ 150o C Package TO-252 Packing Ro HS Status Reel pliant May. 2021. Revision 1.2 Magnachip Semiconductor Ltd. MMD65R600Q Datasheet - Absolute Maximum Rating (Tc=25o C unless otherwise specified) Parameter Symbol Rating Unit Note Drain - Source voltage Gate - Source voltage Continuous drain...