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SLD11N40UZ - N-Channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 8.5A, 400V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Sour.

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Datasheet Details

Part number SLD11N40UZ
Manufacturer Maple Semiconductor
File Size 298.35 KB
Description N-Channel MOSFET
Datasheet download datasheet SLD11N40UZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLD11N40UZ / SLU11N40UZ SLD11N40UZ / SLU11N40UZ 400V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 8.5A, 400V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.