SLP830UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLP830UZ
Manufacturer	Maple Semiconductor
File Size	322.16 KB
Description	N-Channel MOSFET
Datasheet	SLP830UZ Datasheet
Additional preview pages of the SLP830UZ datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 5.0A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.

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Published: Apr 11, 2017 |