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SLW18N50C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Datasheet Details

Part number SLW18N50C
Manufacturer Maple Semiconductor
File Size 267.03 KB
Description N-Channel MOSFET
Datasheet download datasheet SLW18N50C Datasheet
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Full PDF Text Transcription

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SLW18N50C SLW18N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 18A, 500V, RDS(on) = 0.
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