SLW60R070SJ Datasheet | Maple Semiconductor

Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wl Aeo,gng5a0ytee0. Vsch,pa Rer Dgc Se(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nr Ce V)d GS = V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLW60R070SJ 600V N-Channel MOSFET Features -47A, 600V, RDS(on) typ.= 60mΩ@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 170n C) TO‐247 TO‐3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS...