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SLW60R070SJ - N-Channel MOSFET

General Description

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Vsch,paRerDgcSe(oi(na)ttlyylppy.

Key Features

  • -47A, 600V, RDS(on) typ. = 60mΩ@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 170nC) D TO‐247 TO‐3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source.

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Datasheet Details

Part number SLW60R070SJ
Manufacturer Maple Semiconductor
File Size 560.09 KB
Description N-Channel MOSFET
Datasheet download datasheet SLW60R070SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLW60R070SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLW60R070SJ 600V N-Channel MOSFET Features -47A, 600V, RDS(on) typ.