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SLW28N50C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 28A, 500V, RDS(on)typ. = 0.17Ω@VGS = 10 V - Low gate charge ( typical 102nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2.

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Datasheet Details

Part number SLW28N50C
Manufacturer Maple Semiconductor
File Size 928.79 KB
Description N-Channel MOSFET
Datasheet download datasheet SLW28N50C Datasheet
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Full PDF Text Transcription

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SLW28N50C SLW28N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 28A, 500V, RDS(on)typ. = 0.
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