SLW9N90C Datasheet | Maple Semiconductor

6/:1& 9 1&KDQQHO 026)(7 - HQHUDO 'HVFULSWLRQ This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. )HDWXUHV - 9A, 900V, RDS(on) = 1.05ȍ@VGS = 10 V - Low gate charge ( typical 70 n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability ' - - '6 723 $EVROXWH 0D[LPXP 5DWLQJV TC = 25- C unless otherwise noted 6PERO 3DUDPHWHU VDSS IDM VGSS EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25୅) - Continuous (TC = 100୅) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC =...