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ME4425-G - P-Channel 30-V (D-S) MOSFET

This page provides the datasheet information for the ME4425-G, a member of the ME4425 P-Channel 30-V (D-S) MOSFET family.

Datasheet Summary

Description

The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦14mΩ@VGS=-10V.
  • RDS(ON)≦19mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME4425-G

Datasheet Details

Part number ME4425-G
Manufacturer Matsuki Electric
File Size 1.03 MB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ME4425-G Datasheet
Additional preview pages of the ME4425-G datasheet.

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Full PDF Text Transcription

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P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4425/ME4425-G FEATURES ● RDS(ON)≦14mΩ@VGS=-10V ● RDS(ON)≦19mΩ@VGS=-4.
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