ME4425 - P-Channel 30-V (D-S) MOSFET

Datasheet Summary

Description

The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦14mΩ@VGS=-10V.
RDS(ON)≦19mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Matsuki Electric

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Datasheet Details

Part number	ME4425
Manufacturer	Matsuki Electric
File Size	1.03 MB
Description	P-Channel 30-V (D-S) MOSFET
Datasheet	ME4425 Datasheet
Additional preview pages of the ME4425 datasheet.

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ME4425-G - P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4425/ME4425-G FEATURES ● RDS(ON)≦14mΩ@VGS=-10V ● RDS(ON)≦19mΩ@VGS=-4.

Published: May 23, 2011 |