Datasheet Summary
N-Channel 60V (D-S) MOSFET, ESD Protection PGrEoNteEcRtAeLd DESCRIPTION
The ME2N70023D2-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
Small SOT-23 Top View
Features
- RDS(ON) ≦3Ω@VGS=10V
- RDS(ON) ≦4Ω@VGS=4.5V
- RDS(ON) ≦4.5Ω@VGS=3V
- ESD...