ME2N70023E1-G Description
The ME2N70023E1-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power...
ME2N70023E1-G Key Features
- RDS(ON) ≦4Ω@VGS=10V
- RDS(ON) ≦4Ω@VGS=4.5V
- ESD Protection HBM≧1KV
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
ME2N70023E1-G Applications
- Power Management in Note book