ME2N7002F1KW
ME2N7002F1KW is Dual N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦8Ω@VGS=4V
- RDS(ON)≦13Ω@VGS=2.5V
- ESD Protection HBM 1KV
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(SOT-363) Top View e Ordering Information: ME2N7002F1KW (Pb-free)
ME2N7002F1KW -G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
Pulsed Drain Current
Maximum Power...
