ME2N7002F1W
ME2N7002F1W is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦8Ω@VGS=4V
- RDS(ON)≦13Ω@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
(SOT-323) Top View
Ordering Information:ME2N7002F1W (Pb-free) ME2N7002F1W-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
Pulsed Drain Current
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction and...
