ME2N7002F1W-G Datasheet | Matsuki

DESCRIPTION The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES - RDS(ON)≦8Ω@VGS=4V - RDS(ON)≦13Ω@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter (SOT-323) Top View Ordering Information:ME2N7002F1W (Pb-free) ME2N7002F1W-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction and...