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ME2N7002F1W-G - N-Channel MOSFET

This page provides the datasheet information for the ME2N7002F1W-G, a member of the ME2N7002F1W N-Channel MOSFET family.

Product Overview

Matsuki

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ME2N7002F1W-G N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2N7002F1W-G

Datasheet Details

Part number	ME2N7002F1W-G
Manufacturer	Matsuki
File Size	858.35 KB
Description	N-Channel MOSFET
Datasheet	ME2N7002F1W-G Datasheet
Additional preview pages of the ME2N7002F1W-G datasheet.

ME2N7002F1W-G Product details

Description

The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦8Ω@VGS=4V.
RDS(ON)≦13Ω@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |