ME2N7002F1W-G Description
The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME2N7002F1W-G Key Features
- RDS(ON)≦8Ω@VGS=4V
- RDS(ON)≦13Ω@VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME2N7002F1W-G Applications
- Power Management in Note book