ME3205F-G Datasheet | Matsuki

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220F) Top View ME3205F/ME3205F-G Features - RDS(ON)≦6mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance...