Datasheet4U Logo Datasheet4U.com

ME3205H-G - N-Channel MOSFET

Datasheet Summary

Description

The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦6.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME3205H-G

Datasheet Details

Part number ME3205H-G
Manufacturer Matsuki
File Size 0.98 MB
Description N-Channel MOSFET
Datasheet download datasheet ME3205H-G Datasheet
Additional preview pages of the ME3205H-G datasheet.

📁 Similar Datasheet

  • ME3206 - Low ESR Cap Compatable Positive Voltage Regulators (Microne)
  • ME3206AAA - Low ESR Cap Compatable Positive Voltage Regulators (Microne)
  • ME3206ABB - Low ESR Cap Compatable Positive Voltage Regulators (Microne)
  • ME3206KAA - Low ESR Cap Compatable Positive Voltage Regulators (Microne)
  • ME3206KBB - Low ESR Cap Compatable Positive Voltage Regulators (Microne)
  • ME3215 - SMT Power Inductors (Coilcraft)
  • ME3215-102MLB - SMT Power Inductors (Coilcraft)
  • ME3215-102MLC - SMT Power Inductors (Coilcraft)
  • ME3215-102MLD - SMT Power Inductors (Coilcraft)
  • ME3215-103KLB - SMT Power Inductors (Coilcraft)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-263-2L) Top View ME3205H-G FEATURES ● RDS(ON)≦6.
Published: |