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ME3205H-G - N-Channel MOSFET

General Description

The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

  • RDS(ON)≦6.5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME3205H-G
Manufacturer Matsuki
File Size 0.98 MB
Description N-Channel MOSFET
Datasheet download datasheet ME3205H-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-263-2L) Top View ME3205H-G FEATURES ● RDS(ON)≦6.