ME3205H-G Overview
The ME3205H-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are...
ME3205H-G Key Features
- RDS(ON)≦6.5mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME3205H-G Applications
- Power Management in Note book