ME3205T-G Datasheet PDF - Matsuki N-Channel MOSFET Specs

ME3205T-G - N-Channel MOSFET

This page provides the datasheet information for the ME3205T-G, a member of the ME3205T N-Channel MOSFET family.

Datasheet Summary

Description

The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦6.5mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME3205T-G
Manufacturer	Matsuki
File Size	933.39 KB
Description	N-Channel MOSFET
Datasheet	ME3205T-G Datasheet
Additional preview pages of the ME3205T-G datasheet.

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Full PDF Text Transcription

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N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. ME3205T/ME3205T-G FEATURES ● RDS(ON)≦6.

Published: Mar 21, 2018 |