ME35N10-G datasheet by Matsuki.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | ME35N10-G |
|---|---|
| Datasheet | ME35N10-G ME35N10 Datasheet (PDF) |
| File Size | 1.11 MB |
| Manufacturer | Matsuki |
| Description | N-Channel 100V (D-S) MOSFET |
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The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
| Part Number | Description |
|---|---|
| ME35N10 | N-Channel 100V (D-S) MOSFET |
| ME35N06 | N-Channel 60V (D-S) MOSFET |
| ME35N06-G | N-Channel 60V (D-S) MOSFET |
| ME35N06F | N-Channel 60V (D-S) MOSFET |
| ME35N06F-G | N-Channel 60V (D-S) MOSFET |
| ME35N06P | N-Channel 60V (D-S) MOSFET |
| ME35N06P-G | N-Channel 60V (D-S) MOSFET |
| ME35N06T | N-Channel 60V (D-S) MOSFET |
| ME35N06T-G | N-Channel 60V (D-S) MOSFET |
| ME3500 | N- & P-Channel 30V (D-S) MOSFET |
