ME35N10-G
ME35N10-G is N-Channel 100V (D-S) MOSFET manufactured by Matsuki.
- Part of the ME35N10 comparator family.
- Part of the ME35N10 comparator family.
DESCRIPTION
The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
PIN CONFIGURATION
FEATURES
- RDS(ON)≦22mΩ@VGS=10V
- RDS(ON)≦26mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- DC/DC Converter
- Load Switch
- LCD/ LED Display inverter
(TO-252-3L) Top View
- The Ordering Information: ME35N10 (Pb-free) ME35N10-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation-
TC=25℃...
