ME35N10-G Datasheet PDF - Matsuki N-Channel 100V (D-S) MOSFET Specs

ME35N10-G - N-Channel 100V (D-S) MOSFET

This page provides the datasheet information for the ME35N10-G, a member of the ME35N10 N-Channel 100V (D-S) MOSFET family.

Datasheet Summary

Description

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

RDS(ON)≦22mΩ@VGS=10V.
RDS(ON)≦26mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME35N10-G
Manufacturer	Matsuki
File Size	1.11 MB
Description	N-Channel 100V (D-S) MOSFET
Datasheet	ME35N10-G Datasheet
Additional preview pages of the ME35N10-G datasheet.

📁 Similar Datasheet

ME35N06G - N-Channel MOSFET (VBsemi)

ME3-ETO - Electrochemical Sensor (Winsen)

ME3-HF - Electrochemical Sensor (Winsen)

ME3-NO2 - Electrochemical Gas Sensor (Winsen)

ME301C - DC-DC Converter (Microne)

ME3101 - 500mA Synchronous Step-Down DC/DC Converters (Microne)

ME3101A10 - 500mA Synchronous Step-Down DC/DC Converters (Microne)

ME3101A12 - 500mA Synchronous Step-Down DC/DC Converters (Microne)

ME3101A18 - 500mA Synchronous Step-Down DC/DC Converters (Microne)

ME3101A33 - 500mA Synchronous Step-Down DC/DC Converters (Microne)

Full PDF Text Transcription

Click to expand full text

ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@VGS=4.

Published: Mar 20, 2018 |