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ME35N10 - N-Channel 100V (D-S) MOSFET

General Description

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

  • RDS(ON)≦22mΩ@VGS=10V.
  • RDS(ON)≦26mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME35N10
Manufacturer Matsuki
File Size 1.11 MB
Description N-Channel 100V (D-S) MOSFET
Datasheet download datasheet ME35N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@VGS=4.