ME4548-G Datasheet | Matsuki

DESCRIPTION The ME4548 is the dual N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4548/ME4548-G FEATURES - RDS(ON) ≦18 mΩ@VGS=10V (N-Ch) - RDS(ON) ≦29 mΩ@VGS=4.5V(N-Ch) - RDS(ON) ≦20mΩ@VGS=-10V(P-Ch) - RDS(ON) ≦29 mΩ@VGS=-4.5V(P-Ch) - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - Portable Equipment - Battery...