ME4548-G Overview
The ME4548 is the dual N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side...
ME4548-G Key Features
- RDS(ON) ≦18 mΩ@VGS=10V (N-Ch)
- RDS(ON) ≦29 mΩ@VGS=4.5V(N-Ch)
- RDS(ON) ≦20mΩ@VGS=-10V(P-Ch)
- RDS(ON) ≦29 mΩ@VGS=-4.5V(P-Ch)
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME4548-G Applications
- Power Management in Note book