ME45N03T-G - N-Channel MOSFET

Matsuki

Download the ME45N03T-G datasheet PDF. This datasheet also covers the ME45N03T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦14mΩ@VGS=10V.
RDS(ON)≦21mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME45N03T-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME45N03T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME45N03T-G
Manufacturer	Matsuki
File Size	1.16 MB
Description	N-Channel MOSFET
Datasheet	ME45N03T-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME45N03T	N-Channel MOSFET
ME4542	N- and P-Channel MOSFET
ME4542-G	N- and P-Channel MOSFET
ME4542D	N- & P-Channel MOSFET
ME4542D-G	N- & P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

30V N-Channel Enhancement Mode ME45N03T/ME45N03T-G GENERAL DESCRIPTION The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.