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ME45N03T-G - N-Channel MOSFET

This page provides the datasheet information for the ME45N03T-G, a member of the ME45N03T N-Channel MOSFET family.

Description

The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦14mΩ@VGS=10V.
  • RDS(ON)≦21mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME45N03T-G

Datasheet Details

Part number ME45N03T-G
Manufacturer Matsuki
File Size 1.16 MB
Description N-Channel MOSFET
Datasheet download datasheet ME45N03T-G Datasheet
Additional preview pages of the ME45N03T-G datasheet.

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Full PDF Text Transcription

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30V N-Channel Enhancement Mode ME45N03T/ME45N03T-G GENERAL DESCRIPTION The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.
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