ME45N03T - N-Channel MOSFET

Matsuki

General Description

The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦14mΩ@VGS=10V.
RDS(ON)≦21mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME45N03T n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME45N03T
Manufacturer	Matsuki
File Size	1.16 MB
Description	N-Channel MOSFET
Datasheet	ME45N03T Datasheet

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ME45N03T-G	N-Channel MOSFET
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30V N-Channel Enhancement Mode ME45N03T/ME45N03T-G GENERAL DESCRIPTION The ME45N03T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦14mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.