ME7202-G Datasheet | Matsuki

DESCRIPTION The ME7202 is the dual N-Channel + P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN 2X2) Bottom View FEATURES - RDS(ON) ≦ 31 mΩ@VGS=4.5V (N-Ch) - RDS(ON) ≦ 43 mΩ@VGS=2.5V(N-Ch) - RDS(ON) ≦ 74 mΩ@VGS=1.8V(N-Ch) - RDS(ON) ≦ 73mΩ@VGS=-4.5V(P-Ch) - RDS(ON) ≦ 120 mΩ@VGS=-2.5V(P-Ch) - RDS(ON) ≦ 240 mΩ@VGS=-1.8V(P-Ch) - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC...