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ME70N03A - 25V N-Channel Enhancement Mode MOSFET

Key Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current ME70N03A(Pb-Free).

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Datasheet Details

Part number ME70N03A
Manufacturer Matsuki
File Size 644.77 KB
Description 25V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME70N03A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@45A = 6m RDS(ON), Vgs@4.5V,Ids@30A =9m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current ME70N03A(Pb-Free) APPLICATIONS Motherboard (V-Core) Portable Equipment DC/DC Converter Load Switch LCD Display inverter IPC PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25 TA=70 Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.