ME70N06T-G - N-Channel 60-V (D-S) MOSFET

Matsuki

Download the ME70N06T-G datasheet PDF. This datasheet also covers the ME70N06T variant, as both devices belong to the same n-channel 60-v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

trench technology.

minimize on-state resistance.

Key Features

RDS(ON)≦12mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME70N06T-G n-channel 60-v (d-s) mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME70N06T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME70N06T-G
Manufacturer	Matsuki
File Size	1.12 MB
Description	N-Channel 60-V (D-S) MOSFET
Datasheet	ME70N06T-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME70N06T	N-Channel 60-V (D-S) MOSFET
ME70N03	N-Channel Enhancement Mode MOSFET
ME70N03A	25V N-Channel Enhancement Mode MOSFET
ME70N03S	30V N-Channel Enhancement Mode MOSFET
ME70N03S-G	30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME70N06T /ME70N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.