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ME70N03S-G - 30V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the ME70N03S-G, a member of the ME70N03S 30V N-Channel Enhancement Mode MOSFET family.

Description

The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦6.6mΩ@VGS=10V.
  • RDS(ON)≦11mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current particularly suited for low voltage.

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Datasheet preview – ME70N03S-G

Datasheet Details

Part number ME70N03S-G
Manufacturer Matsuki
File Size 1.33 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME70N03S-G Datasheet
Additional preview pages of the ME70N03S-G datasheet.

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Full PDF Text Transcription

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ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are FEATURES ● RDS(ON)≦6.6mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular capability phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
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