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ME70N03S-G Datasheet

30v N-channel Enhancement Mode MOSFET

Manufacturer: Matsuki

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME70N03S-G Overview

The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

ME70N03S-G Key Features

  • RDS(ON)≦6.6mΩ@VGS=10V
  • RDS(ON)≦11mΩ@VGS=4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current

ME70N03S-G Applications

  • Power Management in Note book

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ME70N03S-G Distributor