ME70N06T - N-Channel 60-V (D-S) MOSFET

Matsuki

General Description

trench technology.

minimize on-state resistance.

Key Features

RDS(ON)≦12mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME70N06T n-channel 60-v (d-s) mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME70N06T
Manufacturer	Matsuki
File Size	1.12 MB
Description	N-Channel 60-V (D-S) MOSFET
Datasheet	ME70N06T Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME70N06T-G	N-Channel 60-V (D-S) MOSFET
ME70N03	N-Channel Enhancement Mode MOSFET
ME70N03A	25V N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

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ME70N06T /ME70N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.