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ME70N06T - N-Channel 60-V (D-S) MOSFET

Description

trench technology.

minimize on-state resistance.

Features

  • RDS(ON)≦12mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME70N06T

Datasheet Details

Part number ME70N06T
Manufacturer Matsuki
File Size 1.12 MB
Description N-Channel 60-V (D-S) MOSFET
Datasheet download datasheet ME70N06T Datasheet
Additional preview pages of the ME70N06T datasheet.

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Full PDF Text Transcription

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ME70N06T /ME70N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
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