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ME7203 - P-Channel MOSFET

General Description

ME7203, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -30V/-5.3A,RDS(ON)=30 GS=-10V -30V/-4.2A,RDS(ON)=40 GS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X2-6L package design.

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Datasheet Details

Part number ME7203
Manufacturer Matsuki
File Size 1.62 MB
Description P-Channel MOSFET
Datasheet download datasheet ME7203 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description ME7203, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) Features -30V/-5.3A,RDS(ON)=30 GS=-10V -30V/-4.2A,RDS(ON)=40 GS=-4.