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ME7890D/ME7890D-G
N-Channel 30V (D-S) MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME7890D-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 5X6) Top View
FEATURES
● RDS(ON)≦4.6mΩ@VGS=10V ● RDS(ON)≦7.8mΩ@VGS=4.
ME7890D Datasheet
