Datasheet Details
| Part number | ME7890ED |
|---|---|
| Manufacturer | Matsuki |
| File Size | 951.64 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME7890ED-Matsuki.pdf |
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Overview: ME7890ED/ME7890ED-G N-Channel 30V (D-S) MOSFET, ESD Protected.
| Part number | ME7890ED |
|---|---|
| Manufacturer | Matsuki |
| File Size | 951.64 KB |
| Description | N-Channel MOSFET |
| Datasheet | ME7890ED-Matsuki.pdf |
|
|
|
The ME7890ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME7890ED-G | N-Channel MOSFET |
| ME7890D | N-Channel MOSFET |
| ME7890D-G | N-Channel MOSFET |
| ME7802-G | N-Channel MOSFET |
| ME7802S-G | N-Channel MOSFET |
| ME7804-G | N-Channel MOSFET |
| ME7804AS-G | N-Channel MOSFET |
| ME7804S-G | N-Channel MOSFET |
| ME7806S-G | N-Channel MOSFET |
| ME7809 | P-Channel MOSFET |