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ME95P03-G - P-Channel MOSFET

This page provides the datasheet information for the ME95P03-G, a member of the ME95P03 P-Channel MOSFET family.

Description

The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦5.6mΩ@VGS=-20V.
  • RDS(ON)≦6mΩ@VGS=-10V.
  • RDS(ON)≦8mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME95P03-G

Datasheet Details

Part number ME95P03-G
Manufacturer Matsuki
File Size 1.20 MB
Description P-Channel MOSFET
Datasheet download datasheet ME95P03-G Datasheet
Additional preview pages of the ME95P03-G datasheet.

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Full PDF Text Transcription

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P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME95P03/ME95P03-G FEATURES ● RDS(ON)≦5.6mΩ@VGS=-20V ● RDS(ON)≦6mΩ@VGS=-10V ● RDS(ON)≦8mΩ@VGS=-4.
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