ME95P03-G Datasheet | Matsuki

DESCRIPTION The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252-3L) Top View ME95P03/ME95P03-G FEATURES - RDS(ON)≦5.6mΩ@VGS=-20V - RDS(ON)≦6mΩ@VGS=-10V - RDS(ON)≦8mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter - The Ordering Information: ME95P03 (Pb-free) ME95P03-G (Green product-Halogen...