Datasheet4U Logo Datasheet4U.com

MEBSS138-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦3Ω@VGS=10V.
  • RDS(ON)≦3.5Ω@VGS=5V.
  • RDS(ON)≦7Ω@VGS=2.75V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
MEBSS138 N-Channel MOSFET
MEBSS138D N-Channel MOSFET
MEBSS138D-G N-Channel MOSFET
MEBSS138DK N-Channel MOSFET
MEBSS138DK-G N-Channel MOSFET
MEBSS123 N-Channel MOSFET
MEBSS123-G N-Channel MOSFET
MEBSS84 P-Channel MOSFET
MEBSS84-G P-Channel MOSFET

MEBSS138-G Distributor