MEBSS138-G Datasheet | Matsuki

MEBSS138/MEBSS138-G - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Features - RDS(ON)≦3Ω@VGS=10V - RDS(ON)≦3.5Ω@VGS=5V - RDS(ON)≦7Ω@VGS=2.75V - Super high density cell design...