MEBSS138D Datasheet | Matsuki

MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Features - RDS(ON)≦3.5Ω@VGS=10V - RDS(ON)≦4Ω@VGS=4.5V - Super high density cell design for extremely low RDS(ON) -...