MEBSS138D Description
The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits and low in-line power loss...
MEBSS138D Key Features
- RDS(ON)≦3.5Ω@VGS=10V
- RDS(ON)≦4Ω@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
MEBSS138D Applications
- Power Management in Note book