MEBSS84-G Overview
FEATURES The MEBSS84 is the P-Channel logic enhancement mode power RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited Exceptional on-resistance and maximum DC current...
MEBSS84-G Key Features
- RDS(ON)≦5Ω@VGS=-10V
- RDS(ON)≦6Ω@VGS=-5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
MEBSS84-G Applications
- Power Management in Note book