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MEBSS84-G - P-Channel MOSFET

This page provides the datasheet information for the MEBSS84-G, a member of the MEBSS84 P-Channel MOSFET family.

Features

  • The MEBSS84 is the P-Channel logic enhancement mode power.
  • RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS.
  • RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

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Datasheet preview – MEBSS84-G

Datasheet Details

Part number MEBSS84-G
Manufacturer Matsuki
File Size 925.87 KB
Description P-Channel MOSFET
Datasheet download datasheet MEBSS84-G Datasheet
Additional preview pages of the MEBSS84-G datasheet.

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Full PDF Text Transcription

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MEBSS84/ MEBSS84-G P-Channel 50V Enhancement Mode Mosfet GMENOESRFAELT DESCRIPTION FEATURES The MEBSS84 is the P-Channel logic enhancement mode power ● RDS(ON)≦5Ω@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦6Ω@VGS=-5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
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