Datasheet Summary
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ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
- Single device supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages 1.70V- 1.95V VCC 1.70V- 2.25V VCCQ (Option W)
- Random Access Time: 70ns
- Burst Mode Write Access Continuous burst
- Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz
- Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
- Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst...