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MT45W2MW16BFB - (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory

General Description

, and Figure 40 on page 50 for 54-ball mechanical drawing.

Configuration: 4 Meg x 16 2 Meg x 16 Package 54-ball FBGA Operating Temperature Range Wireless (-25°C to +85°C) Industrial (-40°C to +85°C) NOTE: Marking MT45W4Mx16BFB MT45W2Mx16BFB FB WT IT

Key Features

  • Single device supports asynchronous, page, and burst operations.
  • VCC, VCCQ Voltages 1.70V.
  • 1.95V VCC 1.70V.
  • 2.25V VCCQ (Option W).
  • Random Access Time: 70ns.
  • Burst Mode Write Access Continuous burst.
  • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz.
  • Page Mode Read Access Sixteen-word page size Interpage r.

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Datasheet Details

Part number MT45W2MW16BFB
Manufacturer Micron Semiconductor
File Size 792.67 KB
Description (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory
Datasheet download datasheet MT45W2MW16BFB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.